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Same model may have multiple batches, images only for reference.
IRFIZ48VPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFIZ48VPBF

Part No IRFIZ48VPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 39A TO220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 1985pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 205368-IRFIZ48VPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 500
Ultra Librarian 3D Model Ultra Librarian IRFIZ48VPBF CAD Model

Description

The Infineon Technologies IRFIZ48VPBF is a through-hole N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 39A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 12 mOhm @ 43A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Package: TO-220AB full-pak
  • Maximum Power Dissipation: 43W (Tc)

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