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Same model may have multiple batches, images only for reference.
IRFL024Z Real Image
Same model may have multiple batches, images only for reference.

IRFL024Z

Part No IRFL024Z
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 55V 5.1A SOT223
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 5.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 57.5mOhm at 3.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 340pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-223
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 80
MSL Level 1 (Unlimited)
Win Source Part Number 1187718-IRFL024Z
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFL024Z CAD Model

Description

The Infineon Technologies MOSFET is a discrete semiconductor product that is ideal for use in various electronic applications.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 5.1A
  • Power Dissipation: 1W
  • Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 340pF @ 25V
  • Gate Charge: 14nC @ 10V
  • Package: SOT-223
  • Drive Voltage: 10V
  • Supply and Demand Status: Balanced
  • Manufacturer Pack Quantity: 80

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
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Availability: 75,890 pieces
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