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Same model may have multiple batches, images only for reference.
IRFN450
Same model may have multiple batches, images only for reference.

IRFN450

Part No IRFN450
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 8 A
Drain to Source Breakdown Voltage 500 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
On-State Resistance 400 mΩ
Packaging Bulk
Power Dissipation 150 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1019675-IRFN450
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFN450 CAD Model

Description

The Infineon Technologies IRFN450 is a power switch MOSFET that is designed for use in high current and high voltage applications.

  • Continuous Drain Current (ID): 8A
  • Gate to Source Voltage (Vgs): 20V
  • On-State Resistance: 400mΩ
  • Drain to Source Breakdown Voltage: 500V
  • Mounting Type: Surface Mount
  • Package: Bulk
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -55°C
  • RoHS: Compliant
  • Contains Lead: Yes

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Quantity Unit Price Ext. Price
1+ $149.1876 $149.1876
2+ $144.2146 $288.4292
3+ $129.2958 $387.8874
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