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Same model may have multiple batches, images only for reference.
IRFP260N Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFP260N

Part No IRFP260N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 50A TO-247AC
Datasheet
IRFP260N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 234nC @ 10V
Max Input Capacitance 4057pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 28A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 60552-IRFP260N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFP260N CAD Model

Description

The Infineon Technologies IRFP260N is a N-Channel MOSFET with a maximum power dissipation of 300W (Tc).

  • Power Dissipation: 300W (Tc)
  • Mounting Type: Through Hole
  • Package: TO-247AC
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current at 25°C: 50A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 234nC @ 10V
  • Maximum Rds On at Id,Vgs: 40 mOhm @ 28A, 10V
  • Product Category: Discrete Semiconductor Products

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