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IRFP3077PBF

Part No IRFP3077PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A TO-247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 9400pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 340W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 1046986-IRFP3077PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFP3077PBF CAD Model

Description

The Infineon Technologies IRFP3077PBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 120A @ 25°C
  • Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V
  • Package: TO-247AC
  • Mounting Type: Through hole
  • Maximum Power Dissipation: 340W
  • Operating Temperature: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5574 $54.5090
80+ $1.2779 $102.2320
125+ $1.2380 $154.7500
170+ $1.1980 $203.6600
220+ $1.1581 $254.7820
290+ $1.0383 $301.1070
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,480 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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