The IRFP4410ZPBF is a high-performance power MOSFET from Infineon Technologies, designed for high-efficiency power conversion applications. This device leverages advanced trench MOSFET technology to achieve exceptionally low on-state resistance (Rds(on)) and gate charge, resulting in reduced conduction and switching losses. The 'Z' in the part number indicates an optimized gate charge for improved switching performance.

Applications

• Synchronous rectification in AC-DC and DC-DC converters
• High-frequency inverters
• Uninterruptible Power Supplies (UPS)
• Motor control circuits
• Power tools

Features

• Advanced trench MOSFET technology
• Low on-state resistance (Rds(on))
• Optimized gate charge (Qg)
• Avalanche rated
• 100% UIS tested
• Lead-free package
• RoHS compliant

Benefits

• Increased power conversion efficiency
• Reduced power dissipation and heat generation
• Simplified thermal management
• Improved system reliability
• Enhanced switching performance
• Environmentally friendly

Additional Details

The IRFP4410ZPBF features a breakdown voltage (Vds) of 100V and a continuous drain current (Id) of up to 120A, making it suitable for demanding power applications. Its low Rds(on) minimizes conduction losses, while the optimized gate charge reduces switching losses, contributing to higher overall efficiency. The device is avalanche rated, providing robustness against transient voltage spikes. It is available in a through-hole TO-247AC package. The PBF suffix denotes that it is a lead-free and RoHS compliant part, meeting environmental regulations.

Key Specifications:

• Vds (Drain-Source Voltage): 100V
• Id (Continuous Drain Current): 120A
• Rds(on) (On-State Resistance): 4.7 mΩ (at Vgs = 10V)
• Qg (Total Gate Charge): 86 nC (at Vgs = 10V)
• Package: TO-247AC