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IRFR2405PBF Infineon Technologies IRFR2405PBF Real Image IRFR2405PBF real image
Same model may have multiple batches, images only for reference.
IRFR2405PBF Infineon Technologies IRFR2405PBF Real Image IRFR2405PBF real image
IRFR2405PBF Infineon Technologies IRFR2405PBF Real Image IRFR2405PBF real image
Same model may have multiple batches, images only for reference.

IRFR2405PBF

Part No IRFR2405PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 56A DPAK
Datasheet
IRFR2405PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2430pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047031-IRFR2405PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR2405PBF CAD Model

Description

The Infineon Technologies IRFR2405PBF is an N-Channel MOSFET that is suitable for use in a wide range of applications.

  • Maximum Power Dissipation: 110W (Tc)
  • Continuous Drain Current: 56A (Tc)
  • Package: D-Pak package
  • Temperature Range: -55°C to 175°C (TJ)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Family: Discrete Semiconductor Products
  • Status: Not for new designs

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Quantity Unit Price Ext. Price
100+ $0.5049 $50.4900
245+ $0.4143 $101.5035
375+ $0.4014 $150.5250
515+ $0.3884 $200.0260
670+ $0.3755 $251.5850
895+ $0.3366 $301.2570
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