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Same model may have multiple batches, images only for reference.
IRFR3707ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3707ZPBF

Part No IRFR3707ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 56A DPAK
Datasheet
IRFR3707ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1150pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 136624-IRFR3707ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR3707ZPBF CAD Model

Description

The Infineon Technologies IRFR3707ZPBF is an N-Channel MOSFET from Infineon Technologies.

  • Designed for: power switching applications
  • Maximum drain-source breakdown voltage: 30V
  • Continuous drain current: 56A (Tc)
  • Gate-source threshold voltage: 2.25V @ 25μA
  • Maximum gate charge: 14nC @ 4.5V
  • Maximum on-state resistance: 9.5 mOhm @ 15A, 10V
  • Package: D-Pak package
  • Operating temperature range: -55°C to 175°C (TJ)
  • Ideal choice for: applications that require a high power N-Channel MOSFET

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
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Availability: 9,160 pieces
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