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IRFR5305PBF

Part No IRFR5305PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 31A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017691-IRFR5305PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR5305PBF CAD Model

Description

The Infineon Technologies IRFR5305PBF is a P-channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 31A @ 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 31A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 65 mOhm @ 16A, 10V
  • Package: D-Pak
  • Power Dissipation: 110W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2733 $50.5605
395+ $0.2560 $101.1200
610+ $0.2473 $150.8530
870+ $0.2300 $200.1000
1,130+ $0.2214 $250.1820
1,410+ $0.2128 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,050 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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