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IRFR540ZPBF

Part No IRFR540ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 1690pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 91W (Tc)
Maximum Rds On at Id,Vgs 28.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017692-IRFR540ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR540ZPBF CAD Model

Description

The Infineon Technologies 017692-IRFR540ZPBF is an N-channel MOSFET with a drain-source breakdown voltage of 100V and continuous drain current of 35A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 35A (Tc) @ 25°C
  • Power Dissipation: 91W (Tc)
  • Maximum Rds on at Id,Vgs: 28.5 mOhm @ 21A, 10V
  • Gate-Source Threshold Voltage: 4V @ 50μA
  • Maximum Gate Charge: 59nC @ 10V
  • Popularity Rating: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6739 $50.5425
160+ $0.6305 $100.8800
250+ $0.6087 $152.1750
355+ $0.5653 $200.6815
460+ $0.5435 $250.0100
575+ $0.5218 $300.0350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,210 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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