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Same model may have multiple batches, images only for reference.
IRFR9N20DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9N20DPBF

Part No IRFR9N20DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.4A DPAK
Datasheet
IRFR9N20DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 86W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047111-IRFR9N20DPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR9N20DPBF CAD Model

Description

The Infineon Technologies IRFR9N20DPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9.4A @ 25°C
  • Maximum Rds On at Id,Vgs: 380 mOhm @ 5.6A and 10V
  • Package: D-Pak
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 86W
  • Operating Temperature Range: -55°C to 175°C
  • Suitable for: power management

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23+ $5.1333 $118.0659
35+ $4.9730 $174.0550
48+ $4.8126 $231.0048
63+ $4.6521 $293.0823
84+ $4.1709 $350.3556
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