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Same model may have multiple batches, images only for reference.
IRFS4020PBF Real Image
Same model may have multiple batches, images only for reference.

IRFS4020PBF

Part No IRFS4020PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A D2PAK
Datasheet
IRFS4020PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1200pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047136-IRFS4020PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS4020PBF CAD Model

Description

Infineon Technologies IRFS4020PBF is an N-channel MOSFET that has a maximum power dissipation of 100W (Tc) and a drain-source breakdown voltage of 200V.

  • Continuous Drain Current: 18A (Tc)
  • Maximum Rds On @ Id,Vgs: 105 mOhm @ 11A, 10V
  • Gate-Source Threshold Voltage: 4.9V @ 100μA
  • Maximum Gate Charge: 29nC @ 10V
  • Package: D2PAK case and has a dimension of TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Suitable Use: Processor applications

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