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Same model may have multiple batches, images only for reference.
IRFU1010Z Real Image
Same model may have multiple batches, images only for reference.

IRFU1010Z

Part No IRFU1010Z
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 55V 42A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 42A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 7.5mOhm at 42A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 95nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2840pF at 25V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package IPAK (TO-251)
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188060-IRFU1010Z
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU1010Z CAD Model

Description

The IRFU1010Z is a MOSFET transistor manufactured by Infineon Technologies. IRFU1010Z is manufactured by Infineon Technologies.

  • Type: N-Channel Transistor
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A
  • Maximum On-Resistance: 7.5mOhm @ 42A, 10V Gate-Source Voltage
  • Gate-Source Voltage Threshold: 4V @ 100μA
  • Gate-Source Voltage Maximum: ±20V
  • Input Capacitance: 2840pF @ 25V
  • Package: IPAK
  • Application: Discrete Semiconductor Products

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