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Same model may have multiple batches, images only for reference.
IRFU2405PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFU2405PBF

Part No IRFU2405PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 56A I-PAK
Datasheet
IRFU2405PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2430pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040380-IRFU2405PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU2405PBF CAD Model

Description

The Infineon Technologies 1040380-IRFU2405PBF is an N-channel MOSFET transistor that is designed to be used in various electronic circuits.

  • Maximum Power Dissipation: 110W (Tc)
  • Mounting Type: Through-Hole
  • Package: Tube/Rail
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 56A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 2430pF @ 25V
  • Maximum Rds On: 16 mOhm @ 34A, 10V
  • Product Status: Active
  • Popularity: Medium

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90+ $1.3015 $117.1350
140+ $1.2608 $176.5120
190+ $1.2201 $231.8190
245+ $1.1794 $288.9530
330+ $1.0574 $348.9420
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Availability: 560 pieces
MOQ: 40 pcs
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