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Same model may have multiple batches, images only for reference.
IRFZ24NSTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ24NSTRRPBF

Part No IRFZ24NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 17A D2PAK
Datasheet
IRFZ24NSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205413-IRFZ24NSTRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ24NSTRRPBF CAD Model

Description

The Infineon Technologies 205413-IRFZ24NSTRRPBF is an obsolete (EOL) N-channel MOSFET designed for use in discrete semiconductor products. With a drain-source breakdown voltage of 55V and a continuous drain current of 17A, this MOSFET is capable of handling a wide range of power dissipation up to 3.8W (Ta), 45W (Tc).

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 370pF @ 25V
  • Maximum Rds On @ Id,Vgs: 70 mOhm @ 10A, 10V
  • Package: D2PAK packaging
  • Mounting: suitable for use in SMD (SMT) applications

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