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Same model may have multiple batches, images only for reference.
IRFZ48NSTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ48NSTRRPBF

Part No IRFZ48NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 64A D2PAK / Trans MOSFET N-CH Si 55V 64A 3-Pin(2+Tab) D2PAK T/R
Datasheet
IRFZ48NSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 81nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1970pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.8W (Ta), 130W (Tc)
Rds On (Maximum) @ Id, Vgs 14 mOhm @ 32A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777084-IRFZ48NSTRRPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFZ48NS
Introduction Date August 25, 1997
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFZ48NSTRRPBF CAD Model

Description

The Infineon Technologies IRFZ48NSTRRPBF is a HEXFET MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Voltage: 55V
  • Current-Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Temperature Range: -55°C to 175°C (TJ)
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250μA
  • Maximum Gate Charge (Qg) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1970pF @ 25V
  • Rds On (Maximum) @ Id, Vgs: 14 mOhm @ 32A, 10V
  • Supply and Demand Status: Limited

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