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IRFZ48ZS

Part No IRFZ48ZS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 61A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 1720pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 91W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 37A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047272-IRFZ48ZS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFZ48ZS CAD Model

Description

The Infineon Technologies IRFZ48ZS is a powerful MOSFET that is designed to deliver high performance and reliability in a compact package.

  • Maximum Power Dissipation: 91W
  • Drain-Source Breakdown Voltage: 55V
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5662 $62.6480
90+ $1.2844 $115.5960
140+ $1.2451 $174.3140
195+ $1.2047 $234.9165
250+ $1.1642 $291.0500
335+ $1.0441 $349.7735
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 85,100 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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