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Same model may have multiple batches, images only for reference.
IRL3705NL Real Image
Same model may have multiple batches, images only for reference.

IRL3705NL

Part No IRL3705NL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 89A TO-262
Datasheet
IRL3705NL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 98nC @ 5V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 128832-IRL3705NL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3705NL CAD Model

Description

The 128832-IRL3705NL is an N-channel MOSFET from Infineon Technologies.

  • Package: TO-262
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 89A @ 25°C
  • On-Resistance: 10 mOhm @ 46A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 98nC @ 5V
  • Applications: High power switching applications, such as motor control and power supplies

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