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IRLR2905TRPBF Real Image IRLR2905TRPBF real image409
Same model may have multiple batches, images only for reference.
IRLR2905TRPBF Real Image IRLR2905TRPBF real image409
IRLR2905TRPBF Real Image IRLR2905TRPBF real image409
Same model may have multiple batches, images only for reference.

IRLR2905TRPBF

Part No IRLR2905TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
IRLR2905TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 48nC @ 5V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017791-IRLR2905TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR2905TRPBF CAD Model

Description

The Infineon IRLR2905TRPBF is an N-Channel MOSFET designed for use in a variety of applications.

  • Maximum Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A
  • Maximum On-Resistance: 27 mOhm @ 25A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 2V @ 250μA
  • Gate Charge: 48nC @ 5V
  • Package: D-Pak package
  • Power Dissipation: 110W
  • Supply Voltage: 4V

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5530 $52.5350
225+ $0.4538 $102.1050
345+ $0.4396 $151.6620
475+ $0.4254 $202.0650
610+ $0.4112 $250.8320
815+ $0.3687 $300.4905
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Availability: 12,580 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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