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IRLR7811WPBF

Name: IRLR7811WPBF
Brand: Infineon Technologies
SKU: 161613
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRLR7811WPBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 64A DPAK
Datasheet	IRLR7811WPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.5V @ 250μA
Max Gate Charge	31nC @ 4.5V
Max Input Capacitance	2260pF @ 15V
Maximum Gate-Source Voltage	±12V
Power Dissipation (Max)	71W (Tc)
Maximum Rds On at Id,Vgs	10.5 mOhm @ 15A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	D-Pak
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	112779-IRLR7811WPBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRLR7811WPBF CAD Model

Alternative Products

Description

The Infineon Technologies 112779-IRLR7811WPBF is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

Maximum Power Dissipation: 71W (Tc)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current @ 25°C: 64A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Maximum Gate Charge: 31nC @ 4.5V
Maximum Input Capacitance: 2260pF @ 15V
Mounting Technology: SMD (SMT)
Package: D-Pak case
Supply and Demand Status: Balance

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
4+	$16.6297	$66.5188
9+	$13.6452	$122.8068
14+	$13.2190	$185.0660
19+	$12.7928	$243.0632
24+	$12.3666	$296.7984
32+	$11.0868	$354.7776

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,800 pieces

MOQ: 4 pcs

Order Increment : 1 pcs

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