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Same model may have multiple batches, images only for reference.
IRLR7843TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR7843TRPBF

Part No IRLR7843TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 161A DPAK
Datasheet
IRLR7843TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 161A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 4380pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017808-IRLR7843TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR7843TRPBF CAD Model

Description

The Infineon Technologies IRLR7843TRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 161A (Tc).

  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Maximum Rds On at Id,Vgs: 3.3 mOhm @ 15A, 10V
  • Designed for: Use in discrete semiconductor products
  • Mounting Technology: SMD (SMT)
  • Maximum Power Dissipation: 140W (Tc)
  • Package: D-Pak package
  • Status: Currently in sufficient supply and demand status

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170+ $0.6005 $102.0850
260+ $0.5802 $150.8520
375+ $0.5396 $202.3500
485+ $0.5194 $251.9090
605+ $0.4991 $301.9555
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