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IRLU3105PBF

Part No IRLU3105PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 25A IPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Rds On (Max) @ Id, Vgs 37mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 25 V
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 300 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 605980-IRLU3105PBF
Ultra Librarian 3D Model Ultra Librarian IRLU3105PBF CAD Model

Description

The IRLU3105PBF is a N-Channel MOSFET transistor from Infineon Technologies. It belongs to the HEXFET series and is designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 55 V
  • Continuous Drain Current (Id): 25A @ 25°C
  • Maximum On-Resistance (Rds On): 37mOhm @ 15A and 10V
  • Gate-Source Voltage Threshold (Vgs(th)): 3V @ 250μA
  • Mounting Type: Through-hole
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Gate Charge (Qg): 20 nC @ 5V
  • Input Capacitance (Ciss): 710 pF @ 25V
  • HTSUS Code: 8541.29.0095
  • Product Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2763 $63.8150
115+ $1.0473 $120.4395
175+ $1.0146 $177.5550
240+ $0.9818 $235.6320
305+ $0.9491 $289.4755
410+ $0.8509 $348.8690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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