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Same model may have multiple batches, images only for reference.
IRLZ34NSTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRLZ34NSTRLPBF

Part No IRLZ34NSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A D2PAK
Datasheet
IRLZ34NSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 133041-IRLZ34NSTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLZ34NSTRLPBF CAD Model

Description

The Infineon Technologies MOSFET is a powerful and reliable electronic component, designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A
  • Power Dissipation: 3.8W @ 68W
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 25nC @ 5V
  • Maximum Input Capacitance: 880pF @ 25V
  • Maximum Rds On at Id,Vgs: 35 mOhm @ 16A, 10V
  • Mounting Type: SMD (SMT)
  • Package: D2PAK

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8475 $50.8500
145+ $0.6954 $100.8330
225+ $0.6737 $151.5825
310+ $0.6519 $202.0890
400+ $0.6302 $252.0800
535+ $0.5650 $302.2750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,200 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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