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Same model may have multiple batches, images only for reference.
IRLZ44NSPBF Real Image
Same model may have multiple batches, images only for reference.

IRLZ44NSPBF

Part No IRLZ44NSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 47A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 48nC @ 5V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 110W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047711-IRLZ44NSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ44NSPBF CAD Model

Description

The IRLZ44NSPBF is a N-channel MOSFET transistor designed for use in a wide range of electronic applications manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: Up to 47A @ 25°C
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On: 22 mOhm @ 25A and 10V
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Status: Not-For-New-Designs
  • Popularity: Medium
  • Supply and Demand: Balanced

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Quantity Unit Price Ext. Price
80+ $0.6603 $52.8240
165+ $0.6186 $102.0690
255+ $0.5977 $152.4135
360+ $0.5559 $200.1240
470+ $0.5350 $251.4500
585+ $0.5141 $300.7485
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