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Same model may have multiple batches, images only for reference.
JANTXV2N7219
Same model may have multiple batches, images only for reference.

JANTXV2N7219

Part No JANTXV2N7219
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 18 A
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 125 W
Radiation Hardening No
RoHS Non-Compliant
Schedule B 8541290080, 8541290080
Win Source Part Number 1191169-JANTXV2N7219
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTXV2N7219 CAD Model

Description

The 1191169-JANTXV2N7219 is a transistor from Infineon Technologies with a power dissipation of 125W and a continuous drain current of 18A.

  • Power Dissipation: 125W
  • Continuous Drain Current: 18A
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Number of Pins: 3
  • Mounting Type: Through Hole
  • RoHS Compliant: No
  • Maximum Operating Temperature: 150°C

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