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Same model may have multiple batches, images only for reference.
SMBT3904UPNE6327 Real Image
Same model may have multiple batches, images only for reference.

SMBT3904UPNE6327

Part No SMBT3904UPNE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays
Description SMALL SIGNAL BIPOLAR TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr Infineon Technologies
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package PG-SC74-6-1
Base Product Number SMBT3904
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 934186-SMBT3904UPNE6327
Ultra Librarian 3D Model Ultra Librarian SMBT3904UPNE6327 CAD Model

Description

The SMBT3904UPNE6327 is a bipolar transistor array designed for use in discrete semiconductor products.

  • Category: Transistors
  • Series: Automotive and AEC-Q101
  • Packaging: Bulk
  • Package Size: 3,000 pieces
  • Power Rating: 330mW
  • Voltage Breakdown: 40V
  • Collector Current: 200mA (Max)
  • Transistor Type: NPN and PNP
  • Vce Saturation: 400mV @ 5mA and 50mA
  • Collector Cutoff Current: 50nA
  • DC Current Gain: 100 @ 10mA and 1V
  • Frequency: 250MHz
  • Mounting Type: Surface Mount
  • Package Options: SOT-23-6 Thin and TSOT-23-6
  • ECCN: EAR99
  • REACH: Unaffected
  • HTSUS Code: 8541.21.0075

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