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SPA08N50C3

Part No SPA08N50C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 7.6A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 350μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 212013-SPA08N50C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA08N50C3 CAD Model

Description

The Infineon Technologies SPA08N50C3 is a discrete semiconductor product that belongs to the MOSFET technology category.

  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 212013-SPA08N50C3

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4484 $57.9360
100+ $1.1885 $118.8500
155+ $1.1515 $178.4825
210+ $1.1146 $234.0660
270+ $1.0776 $290.9520
360+ $0.9656 $347.6160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 637 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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