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Same model may have multiple batches, images only for reference.
SPD01N60C3BTMA1 Real Image
Same model may have multiple batches, images only for reference.

SPD01N60C3BTMA1

Part No SPD01N60C3BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 0.8A TO-252
Datasheet
SPD01N60C3BTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 11W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 101365-SPD01N60C3BTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD01N60C3BTMA1 CAD Model

Description

The Infineon Technologies 101365-SPD01N60C3BTMA1 MOSFET is a N-channel polarity SMD (SMT) device with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 800mA (Tc) @ 25°C.

  • Maximum power dissipation: 11W (Tc)
  • Maximum Rds On: 6 Ohm @ 500mA, 10V
  • Gate-source threshold voltage: 3.9V @ 250μA
  • Maximum gate charge: 5nC @ 10V
  • Suitable for: use in discrete semiconductor products
  • Package: PG-TO252-3 case with dimension TO-252-3, DPak (2 Leads + Tab), SC-63
  • Product status: obsolete (EOL)
  • Market popularity: medium

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