The Infineon Technologies 1101543-SPD04P10PGBTMA1 is a P-channel MOSFET that features a drain-source breakdown voltage of 100V and a continuous drain current of 4A at 25°C.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current @ 25°C: 4A
• Maximum Rds On @ Id,Vgs: 1 Ohm @ 2.8A, 10V
• Gate-Source Threshold Voltage: 4V @ 380μA
• Maximum Gate-Source Voltage: ±20V
• Maximum Input Capacitance: 319pF @ 25V
• Power Dissipation: 38W (Tc)
• Temperature Range: -55°C to 175°C (TJ)
• Package: PG-TO252-3 with dimensions of TO-252-3, DPak (2 Leads + Tab), SC-63
• Application: Discrete Semiconductor Products