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SPD06N80C3ATMA1

Name: SPD06N80C3ATMA1
Brand: Infineon Technologies
SKU: 338411
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SPD06N80C3ATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 800V 6A 3TO252
Datasheet	SPD06N80C3ATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	800V
Continuous Drain Current at 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	3.9V @ 250μA
Max Gate Charge	41nC @ 10V
Max Input Capacitance	785pF @ 100V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	83W (Tc)
Maximum Rds On at Id,Vgs	900 mOhm @ 3.8A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO252-3
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	124738-SPD06N80C3ATMA1
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian SPD06N80C3ATMA1 CAD Model

Alternative Products

Description

The Infineon Technologies electronic component is a high-quality MOSFET product that has a N-Channel polarity.

Win Source Part Number: 124738-SPD06N80C3ATMA1
Maximum Power Dissipation: 83W (Tc)
Continuous Drain Current: 6A (Ta)
Drain-Source Breakdown Voltage: 800V
Gate-Source Threshold Voltage: 3.9V @ 250μA
Counterfeit Risk: a possibility of counterfeit products in the market.
Recommendation: purchase this product from a trusted source.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
45+	$1.1617	$52.2765
95+	$1.0882	$103.3790
145+	$1.0515	$152.4675
205+	$0.9779	$200.4695
270+	$0.9412	$254.1240
335+	$0.9044	$302.9740

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 27,450 pieces

MOQ: 45 pcs

Order Increment : 1 pcs

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