The Infineon Technologies SPD07N60C3BTMA1 MOSFET is a high-performance N-channel power MOSFET.

• Drain-Source Breakdown Voltage: 650V
• Continuous Drain Current: 7.3A @ 25°C
• Maximum Power Dissipation: 83W
• Ideal for: use in industrial, communications and networking, consumer electronics, and power management applications.
• Gate-Source Threshold Voltage: 3.9V @ 350μA
• Maximum Gate Charge: 27nC @ 10V
• Maximum Input Capacitance: 790pF @ 25V
• Maximum Rds On at Id,Vgs: 600 mOhm @ 4.6A, 10V
• Package: PG-TO252-3 package with dimensions of TO-252-3, DPak (2 Leads + Tab), SC-63.