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Same model may have multiple batches, images only for reference.
SPD30N06S2L-23 Real Image
Same model may have multiple batches, images only for reference.

SPD30N06S2L-23

Part No SPD30N06S2L-23
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A DPAK
Datasheet
SPD30N06S2L-23 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 50μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1390pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 042830-SPD30N06S2L-23
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Communications & Networking, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian SPD30N06S2L-23 CAD Model

Description

The Infineon Technologies SPD30N06S2L-23 is an N-channel MOSFET transistor that is designed for use in industrial, communications, and networking applications.

  • Maximum Power Dissipation: 100W
  • Maximum Drain-Source Breakdown Voltage: 55V
  • Popularity Rating: Medium
  • Status: Obsolete
  • Package: P-TO252-3
  • Leads: 2 leads and a tab

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