The Infineon Technologies 131996-SPI21N50C3XKSA1 is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

• GPTDescription: It comes in a PG-TO262-3-1 package and has a drain-source breakdown voltage of 560V.
• GPTDescription: The maximum continuous drain current @ 25°C is 21A (Tc) and the maximum Rds On @ Id, Vgs is 190 mOhm @ 13.1A, 10V.
• GPTDescription: The gate-source threshold voltage is 3.9V @ 1mA and the maximum gate charge is 95nC @ 10V.
• GPTDescription: This MOSFET has a maximum input capacitance of 2400pF @ 25V and a maximum gate-source voltage of ±20V.
• GPTDescription: It has a power dissipation of 208W (Tc) and can operate in a temperature range of -55°C to 150°C (TJ).