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SPP03N60C3

Part No SPP03N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description COOLMOS N-CHANNEL POWER MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
Power Dissipation (Max) 38W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 799 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 339006-SPP03N60C3
Ultra Librarian 3D Model Ultra Librarian SPP03N60C3 CAD Model

Description

The 339006-SPP03N60C3 is a CoolMOS™ MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from Infineon Technologies.

  • Application: Discrete semiconductor applications
  • FET Type: N-channel
  • Drain-to-Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 3.2A @ 25°C
  • Maximum On-Resistance (Rds On): 1.4 Ohm @ 2A and 10V gate-source voltage (Vgs)
  • Power Dissipation: 38W
  • Suitable for: High-power applications
  • Package: Through-hole TO-220-3
  • Gate Charge (Qg): 17nC @ 10V
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5365 $50.9675
230+ $0.4403 $101.2690
355+ $0.4265 $151.4075
485+ $0.4127 $200.1595
630+ $0.3990 $251.3700
840+ $0.3577 $300.4680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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