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Same model may have multiple batches, images only for reference.
SPP11N65C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPP11N65C3

Part No SPP11N65C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A TO-220
Datasheet
SPP11N65C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 065959-SPP11N65C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP11N65C3 CAD Model

Description

The Infineon Technologies 065959-SPP11N65C3 is a MOSFET with an N-channel polarity and a technology of through-hole mounting.

  • Polarity: N-channel
  • Mounting: Through-hole
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 11A
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 7A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 500μA
  • Max Gate Charge: 60nC @ 10V
  • Package: PG-TO220-3-1
  • Temperature Range: -55°C to 150°C

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90+ $1.2844 $115.5960
140+ $1.2439 $174.1460
195+ $1.2035 $234.6825
250+ $1.1631 $290.7750
335+ $1.0430 $349.4050
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