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Same model may have multiple batches, images only for reference.
SPP20N65C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP20N65C3XKSA1

Part No SPP20N65C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20.7A TO-220-3
Datasheet
SPP20N65C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 13.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 192422-SPP20N65C3XKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP20N65C3XKSA1 CAD Model

Description

The SPP20N65C3XKSA1 is a N-Channel MOSFET transistor from Infineon Technologies, designed for use in discrete semiconductor products. The SPP20N65C3XKSA1 is a N-Channel MOSFET transistor from Infineon Technologies, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 20.7A @ 25°C
  • Gate-Source Threshold Voltage: 3.9V @ 1mA
  • Maximum Gate Charge: 114nC @ 10V
  • Maximum Input Capacitance: 2400pF @ 25V
  • Maximum Rds On: 190 mOhm @ 13.1A and 10V
  • Package: Through-hole PG-TO220-3-1
  • Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
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15+ $6.7133 $100.6995
24+ $6.5035 $156.0840
32+ $6.2937 $201.3984
42+ $6.0840 $255.5280
55+ $5.4546 $300.0030
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