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Same model may have multiple batches, images only for reference.
SPP35N10 Real Image
Same model may have multiple batches, images only for reference.

SPP35N10

Part No SPP35N10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A TO-220AB
Datasheet
SPP35N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 83μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 1570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 26.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 065965-SPP35N10
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Automotive
Ultra Librarian 3D Model Ultra Librarian SPP35N10 CAD Model

Description

The Infineon Technologies SPP35N10 is a MOSFET technology-based product that comes with N-channel polarity. The SPP35N10 from Infineon Technologies is a MOSFET technology-based product that comes with N-channel polarity.

  • Polarity: N-Channel
  • Power Dissipation (Max): 150W (Tc)
  • Drive Voltage: 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55 degrees Celsius to 175 degrees Celsius (TJ)
  • Case/Package: PG-TO220-3-1
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 35A (Tc) @ 25 degrees Celsius
  • Gate-Source Threshold Voltage: 4V @ 83μA
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum Input Capacitance: 1570pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 44 mOhm @ 26.4A, 10V
  • Application: Automotive

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