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SPP42N03S2L-13

Part No SPP42N03S2L-13
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 42A TO-220AB
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 37μA
Max Gate Charge 30.5nC @ 10V
Max Input Capacitance 1130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 12.9 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 192426-SPP42N03S2L-13
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP42N03S2L-13 CAD Model

Description

The Infineon Technologies 192426-SPP42N03S2L-13 MOSFET is a N-channel polarity through-hole device with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 42A (Tc) @ 25°C. The 192426-SPP42N03S2L-13 MOSFET from Infineon Technologies is a N-channel polarity through-hole device with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 42A (Tc) @ 25°C.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 42A (Tc) @ 25°C
  • Power Dissipation: 83W (Tc)
  • Maximum Rds On: 12.9 mOhm @ 21A, 10V
  • Gate-Source Threshold Voltage: 2V @ 37μA
  • Maximum Gate Charge: 30.5nC @ 10V
  • Package: PG-TO220-3-1
  • Dimension: TO-220-3
  • Status: Obsolete (EOL)

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