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Same model may have multiple batches, images only for reference.
SPW07N60CFDFKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPW07N60CFDFKSA1

Part No SPW07N60CFDFKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 6.6A TO-247
Datasheet
SPW07N60CFDFKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 300μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 1101662-SPW07N60CFDFKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPW07N60CFDFKSA1 CAD Model

Description

The Infineon Technologies SPW07N60CFDFKSA1 is a N-Channel MOSFET in a PG-TO247-3 package.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 6.6A @ 25°C
  • Power Dissipation: 83W (Tc)
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 5V @ 300μA
  • Maximum Gate Charge: 47nC @ 10V
  • Supply and Demand Status: sufficient

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