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SPW20N60CFD

Name: SPW20N60CFD
Brand: Infineon Technologies
SKU: 339262
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	SPW20N60CFD
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 650V 20.7A TO-247
Datasheet	SPW20N60CFD Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Not For New Designs
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	650V
Continuous Drain Current at 25°C	20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5V @ 1mA
Max Gate Charge	124nC @ 10V
Max Input Capacitance	2400pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	208W (Tc)
Maximum Rds On at Id,Vgs	220 mOhm @ 13.1A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	PG-TO247-3
Dimension	TO-247-3
Win Source Part Number	042837-SPW20N60CFD
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian SPW20N60CFD CAD Model

Alternative Products

Description

The Infineon Technologies SPW20N60CFD is an N-channel MOSFET designed for high voltage and high-speed switching applications.

Maximum Power Dissipation: 208W (Tc)
Drain-Source Breakdown Voltage: 650V
Gate-Source Threshold Voltage: 5V @ 1mA
Maximum Gate Charge: 124nC @ 10V
Maximum Rds On @ Id,Vgs: 220 mOhm @ 13.1A, 10V
Package: PG-TO247-3
Dimension: TO-247-3
Operating Temperature Range: -55°C to 150°C (TJ)
Popularity: Medium
Supply and Demand: Limited

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