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IRF7338

Part No IRF7338
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1187224-IRF7338
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7338 CAD Model

Description

The IRF7338 is a dual P-Channel MOSFET from International Rectifier. It's designed for power management and load switching applications, offering efficient and reliable performance.

Applications

  • Load Switching: Used for switching power to various loads in electronic devices.
  • Power Management: Employed in power management circuits for efficient power distribution.
  • Battery Management Systems (BMS): Utilized in BMS for controlling charging and discharging of batteries.
  • DC-DC Converters: Applied in DC-DC converters for voltage regulation.
  • Portable Devices: Suitable for portable devices due to its compact size and low power consumption.

Features

  • Dual P-Channel MOSFETs: Integrates two independent P-channel MOSFETs in a single package.
  • Low On-Resistance (RDS(on)): Minimizes power loss and heat generation.
  • Logic Level Gate Drive: Can be driven by logic-level signals, simplifying drive circuitry.
  • Surface Mount Package: Comes in a surface mount package for efficient PCB assembly.
  • Fast Switching Speed: Provides fast switching performance to reduce switching losses.

Benefits

  • Space Saving: Dual MOSFETs in a single package reduce PCB space requirements.
  • Improved Efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency.
  • Simplified Design: Logic-level gate drive simplifies the design of gate drive circuits.
  • Compact Design: Surface mount package allows for more compact and efficient PCB layouts.
  • Reduced Heat Dissipation: Lower power losses result in less heat generation, simplifying thermal management.

Additional Details

The IRF7338 is typically available in an SO-8 package. Key specifications include a drain-source voltage (VDS) rating of -30V, a continuous drain current (ID) rating of up to -5.3A per channel, and a typical RDS(on) of 0.065 ohms at VGS = -10V. The gate threshold voltage is designed to be compatible with logic-level drive voltages, typically between -1V and -3V. Its compact size and efficient performance make it a popular choice for portable and space-constrained applications.

This MOSFET is a versatile solution for power management and load switching in various electronic devices.

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