The IRS2308 is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. Housed in a compact package, this driver is designed to provide efficient and reliable control for power switching applications.

Applications:

• Half-bridge and full-bridge converters
• Motor control
• Power supplies
• Class D amplifiers
• Induction heating

Features:

• Floating channel designed for bootstrap operation
• Tolerant to negative transient voltage
• Logic input compatible with CMOS or LSTTL outputs
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• Matched propagation delay for both channels
• Output source/sink current capability of 290mA/600mA

Benefits:

• Simplified gate drive circuitry
• Increased system reliability due to undervoltage lockout
• Improved efficiency due to fast switching speeds
• Robust operation in noisy environments
• Reduced component count and board space

Additional Details:

The IRS2308 operates with a supply voltage range of 10V to 20V for the gate drive. Its floating channel allows for bootstrap operation, simplifying the design of high-side gate drive circuits. The driver is tolerant to negative transient voltages on VS, providing robustness in demanding applications. The logic input is compatible with standard CMOS or LSTTL outputs, making it easy to interface with microcontrollers and other control devices. The matched propagation delay between the high-side and low-side channels ensures symmetrical switching, minimizing dead time and improving efficiency. Undervoltage lockout (UVLO) protection is integrated for both the high-side and low-side drivers, preventing the MOSFETs or IGBTs from operating in a linear region during startup or low-voltage conditions, thereby enhancing system reliability. The output stage is capable of sourcing 290mA and sinking 600mA, providing sufficient drive current for a wide range of power MOSFETs and IGBTs. The operating temperature range is typically -40°C to +125°C, ensuring reliable performance in harsh environments. The device is typically available in SOIC packages which offer good thermal performance and ease of assembly.