The Intersil HGTP2N120BND is a 1200V, 2A N-Channel IGBT (Insulated Gate Bipolar Transistor). It is designed for high-voltage, high-speed switching applications. The IGBT combines the advantages of MOSFETs and bipolar transistors, offering high input impedance and low on-state voltage drop. This device is suitable for applications requiring efficient and reliable switching performance at high voltages.

Applications

• Induction heating
• High-voltage inverters
• Welding equipment
• Power factor correction (PFC) circuits

Features

• N-Channel IGBT
• 1200V Blocking Voltage
• 2A Continuous Collector Current
• High Input Impedance
• Low On-State Voltage Drop

Benefits

• Efficient high-voltage switching
• Reduced power loss and heat generation
• Simplified gate drive requirements
• Improved system reliability

Technical Specifications

The HGTP2N120BND has a collector-emitter voltage (Vce) rating of 1200V and a continuous collector current (Ic) rating of 2A. The gate-emitter voltage (Vge) is ±20V. It is packaged in a TO-220 package. The operating junction temperature ranges from -55°C to +150°C. This IGBT provides a robust and reliable solution for high-voltage switching applications.