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Same model may have multiple batches, images only for reference.
IXFB150N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXFB150N65X2

Part No IXFB150N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 150A PLUS264  /  N-Channel 650 V 150A (Tc) 1560W (Tc) Through Hole PLUS264™
Datasheet
IXFB150N65X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 430 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 20400 pF @ 25 V
Power Dissipation (Max) 1560W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS264™
Package / Case TO-264-3, TO-264AA
Base Product Number IXFB150
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IXFB150N65X2X,IXFB150N65X2X-ND,IXFB150N65X2XINACTIVE
Standard Package 25
Win Source Part Number 1216723-IXFB150N65X2
Ultra Librarian 3D Model Ultra Librarian IXFB150N65X2 CAD Model

Description

IXYS transistor provides a high-quality N-Channel MOSFET transistor with a drain to source voltage of 650V manufactured by IXYS IXYS.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 150A (Tc) @ 25℃
  • Maximum Rds On: 17mOhm @ 75A and 10V
  • Gate Charge: 430 nC @ 10V
  • Input Capacitance: 20400 pF @ 25V
  • Junction Temperature Range: -55℃ to 150℃
  • Package: TO-264-3, TO-264AA

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