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Same model may have multiple batches, images only for reference.
IXFB30N120P Real Image
Same model may have multiple batches, images only for reference.

IXFB30N120P

Part No IXFB30N120P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 30A PLUS264
Datasheet
IXFB30N120P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1200V (1.2kV)
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 6.5V @ 1mA
Max Gate Charge 310nC @ 10V
Max Input Capacitance 22500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1250W (Tc)
Maximum Rds On at Id,Vgs 350 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PLUS264
Dimension TO-264-3, TO-264AA
Win Source Part Number 205677-IXFB30N120P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFB30N120P CAD Model

Description

The IXFB30N120P is a powerful MOSFET transistor manufactured by IXYS. IXYS

  • Maximum Power Dissipation: 1250W
  • Supply and Demand Status: Limited
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 1200V
  • Continuous Drain Current: 30A @ 25°C
  • Maximum Rds On: 350 mOhm @ 500mA, 10V
  • Maximum Gate Charge: 310nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $93.8438 $93.8438
2+ $77.0001 $154.0002
3+ $74.5938 $223.7814
4+ $72.1875 $288.7500
5+ $69.7813 $348.9065
6+ $62.5626 $375.3756
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,266 pieces
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