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Same model may have multiple batches, images only for reference.
IXFH230N075T2 Real Image
Same model may have multiple batches, images only for reference.

IXFH230N075T2

Part No IXFH230N075T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 230A TO-247
Datasheet
IXFH230N075T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 178nC @ 10V
Max Input Capacitance 10500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049396-IXFH230N075T2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH230N075T2 CAD Model

Description

The IXYS IXFH230N075T2 is a high-performance N-channel MOSFET designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current (25°C): 230A (Tc) @ 25°C
  • Power Dissipation: 480W (Tc)
  • Case/Package: TO-247AD (IXFH)
  • Mounting Type: Through-Hole
  • Maximum Gate Charge: 178nC @ 10V
  • Maximum Input Capacitance: 10500pF @ 25V
  • Supply and Demand Status: Sufficient

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