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Same model may have multiple batches, images only for reference.
IXFH23N60Q Real Image
Same model may have multiple batches, images only for reference.

IXFH23N60Q

Part No IXFH23N60Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 23A TO-247
Datasheet
IXFH23N60Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 4mA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 320 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049398-IXFH23N60Q
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH23N60Q CAD Model

Description

The IXFH23N60Q is a N-channel MOSFET manufactured by IXYS.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 23A @ 25°C
  • Maximum Power Dissipation: 400W (Tc)
  • Maximum Rds On at Id,Vgs: 320 mOhm @ 500mA, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 4mA
  • Max Gate Charge: 90nC @ 10V
  • Package: TO-247AD (IXFH)
  • Mounting: Through Hole
  • Popularity: Popular
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $31.9127 $63.8254
5+ $26.1850 $130.9250
7+ $25.3673 $177.5711
10+ $24.5484 $245.4840
13+ $23.7306 $308.4978
17+ $21.2751 $361.6767
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Availability: 5,000 pieces
MOQ: 2 pcs
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