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Same model may have multiple batches, images only for reference.
IXFH26N50P Real Image
Same model may have multiple batches, images only for reference.

IXFH26N50P

Part No IXFH26N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 26A TO-247
Datasheet
IXFH26N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 4mA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 230 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049405-IXFH26N50P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH26N50P CAD Model

Description

The IXFH26N50P electronic component is manufactured by IXYS.

  • Supply and Demand: Sufficient
  • Win Source Part Number: 1049405-IXFH26N50P
  • Type: N-channel MOSFET
  • Power Dissipation (Max): 400W (Tc)
  • Package: TO-247AD (IXFH)
  • Mounting: Through-Hole
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.9308 $53.3772
19+ $5.5554 $105.5526
28+ $5.3678 $150.2984
41+ $4.9924 $204.6884
53+ $4.8047 $254.6491
65+ $4.6170 $300.1050
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Availability: 4,800 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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