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IXFK98N50P3

Part No IXFK98N50P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 98A TO264AA  /  N-Channel 500 V 98A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar3™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 197 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13100 pF @ 25 V
Power Dissipation (Max) 1300W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA
Base Product Number IXFK98
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1189642-IXFK98N50P3
Ultra Librarian 3D Model Ultra Librarian IXFK98N50P3 CAD Model

Description

The IXFK98N50P3 is an N-Channel MOSFET transistor from IXYS.

  • Series: HiPerFET™, Polar3™
  • Transistor Application: Single Transistor
  • Drain to Source Voltage (Vdss): 500 V
  • Continuous Drain Current (Id): 98A (Tc) @ 25°C
  • On-Resistance (Rds On): 50mOhm @ 500mA and 10V gate-source voltage (Vgs)
  • Gate-Source Threshold Voltage (Vgs(th)): 5V @ 8mA
  • Power Dissipation: 1300W (Tc)
  • Gate Charge (Qg): 197 nC @ 10 Vgs
  • Input Capacitance (Ciss): 13100 pF @ 25 Vds
  • Gate-Source Voltage (Vgs): ±30V
  • Package: Through-hole TO-264-3, TO-264AA

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $21.9249 $65.7747
7+ $17.9896 $125.9272
10+ $17.4275 $174.2750
14+ $16.8653 $236.1142
18+ $16.3031 $293.4558
24+ $14.6165 $350.7960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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