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Same model may have multiple batches, images only for reference.
IXFM75N10 IXYS
Same model may have multiple batches, images only for reference.

IXFM75N10

Part No IXFM75N10
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFETs 100V 75A
Datasheet
IXFM75N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category MOSFETs
Manufacturer IXYS
Technology Si
Mounting Style Through Hole
Transistor Polarity N-Channel
Number of Channels 1 Channel
Drain-Source Breakdown Voltage 100 V
Continuous Drain Current 75 A
Operating Temperature (Min) - 55 C
Operating Temperature (Max) + 150 C
Ultra Librarian 3D Model Ultra Librarian IXFM75N10 CAD Model

Description

  • International standard packages 
  • Low RDS (on) HDMOSTM process 
  • Rugged polysilicon gate cell structure 
  • Unclamped Inductive Switching (UIS) rated 
  • Low package inductance - easy to drive and to protect 
  • Fast intrinsic Rectifier

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